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1 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 26 28 30 32 34 36 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) -25 -20 -15 -10 -5 0 5 10 15 20 25 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) s-parameter (db) key features ? frequency range: 31 - 37 ghz ? 35 dbm nominal psat @ mid-band ? 20 db nominal gain @ mid-band ? 12 db nominal return loss ? bias 5-6 v, 2 a quiescent ? 0.15 um 3mi phemt technology ? chip dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in primary applications ? point-to-point radio ? military radar systems ? ka-band sat-com measured fixtured data bias conditions: vd = 6 v, idq = 2 a gain orl irl bias conditions: vd = 6 v, idq = 2 a, duty = 20% @ pin = 24 dbm the triquint TGA4517 is a compact high power amplifier mmic for ka-band applications. the part is designed using triquint?s 0.15um gate power phemt process. the TGA4517 nominally provides 35dbm of saturated output power, and 20db small signal gain @ mid-band of 31 - 37ghz. the mmic also provides 12db return loss. the part is ideally suited for markets such as point-to-point radio, military radar systems, and ka-band satellite communications both commercial and military. the TGA4517 is 100% dc and rf tested on- wafer to ensure performance compliance. lead-free & rohs compliant. product description ka band power amplifier datasheet subject to change without notice
2 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i absolute maximum ratings 1 / symbol parameter value notes vd drain voltage 6.5 v 2/ vg gate voltage range -3 to 0 v id drain current (under rf drive) 4 a 2 / 3 / ? ig ? gate current 141 ma 3 / p in input continuous wave power tbd p d power dissipation 26 w 2 / 4 / t ch operating channel temperature 200 c 5 / 6 / mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4 / when operated at this bias condition (with rf applied) at a base plate temperature of 70 c, the median life is 3.5e+4 hrs. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6 / these ratings apply to each individual fet. table ii dc probe tests (ta = 25 c, nominal) symbol parameter min. typ. max. units v bvgd,q1-q2 breakdown voltage gate-drain -30 -14 -11 v v bvgd,q15-q30 breakdown voltage gate-drain -30 -14 -11 v v p,q15-q30 pinch-off voltage -1.5 -1 -0.5 v each fet cell is 750um
3 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com parameter typical units frequency range 31 - 37 ghz drain voltage, vd 6 v drain current (quiescent), idq 2 a gate voltage, vg -0.5 v small signal gain, s21 @ mid-band 20 db input return loss, s11 14 db output return loss, s22 12 db output power, psat 35 dbm table iii electrical characteristics (ta = 25 0 c, nominal)
4 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) vd = 6 v idq = 2 a pdiss = 12 w 122.3 4.36 1.2e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 0 2 4 6 8 10 12 14 16 18 20 22 24 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) vd=5v v d=6v measured data bias conditions: vd =5-6 v, idq = 2 a, room temp. bias conditions: vd =5-6 v, idq = 2 a, duty = 20%, room temp. 26 27 28 29 30 31 32 33 34 35 36 37 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) vd=5v vd=6v
6 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -25 -20 -15 -10 -5 0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) input return loss (db) vd=5v vd=6v measured data bias conditions: vd =5-6 v, idq = 2 a, room temp. -25 -20 -15 -10 -5 0 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) output return loss (db) vd=5v vd=6v
7 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 22 24 26 28 30 32 34 36 38 7 8 9 101112131415161718192021222324 input power (dbm) output power (dbm) 0 1 2 3 4 5 6 7 8 drain current (a) vd=5v vd=6v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 32 33 34 35 36 37 38 frequency (ghz) id (a) vd=5v v d=6v measured data drain current vs. drain voltage, duty = 20%, room temp. pin = 24 dbm frequency = 35 ghz
8 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd =5-6 v, idq = 2 a, cw power @ pin = 22dbm, room temp. 28 29 30 31 32 33 34 35 36 37 38 32 33 34 35 36 37 38 frequency (ghz) psat (dbm) vd=5v vd=6v
9 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com units: millimeters (inches) thickness: 0.050 (0.002) (reference only) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) rf ground is backside of mmic 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0 0 0.606 (0.024) 0.873 (0.034) 1.188 (0.047) 1.735 (0.068) 1.934 (0.076) 2.134 (0.084) 2.860 (0.113) 3.821 (0.150) 4.352 (0.171) (1.950 (0.077) 4.226 (0.166) 0.005 (0.125) 3.900 (0.154) 1.951 (0.077) (0.034) 0.873 0.606 (0.024) (0.047) 1.188 (0.068) 1.735 (0.076) 1.934 (0.113) 2.860 (0.084) 2.134 (0.150) 3.821 bond pad # 1: bond pad # 2, 18: bond pad # 3, 17: bond pad # 4, 16: bond pad # 5, 15: bond pad # 6, 14: bond pad # 7, 13: bond pad # 8, 12: bond pad # 9, 11: bond pad # 10: (rf in) (vg1) (vd1) (vg2) (vd2) (vg3) (vg4) (vd3) (vd4) (rf out) 0.125 x 0.200 (0.005 x 0.008) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.125 (0.005 x 0.005) 0.125 x 0.200 (0.005 x 0.008) mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.
10 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com chip assembly diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. . rf in rf out vd vg 100 ohm 10uf 0.01uf 0.01uf 0.01uf 0.01uf 0.01uf 0.01uf 1000pf 1000pf 1000pf 1000pf 1000pf 1000pf 1000pf vd
11 TGA4517 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.

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